Strong dopant dependence of electric transport in ion-gated MoS2-Reference-Cited by-同舟云学术

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Strong dopant dependence of electric transport in ion-gated MoS2

Published:2017-07-03 Issue:1 Volume:111 Page:013106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Piatti Erik¹^ORCID,Chen Qihong²,Ye Jianting²

Affiliation:

1. Department of Applied Science and Technology, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 TO Torino, Italy

2. Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG Groningen, The Netherlands

Funder

H2020 European Research Council (ERC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4992477

Reference50 articles.

1. Pristine and intercalated transition metal dichalcogenide superconductors

2. Solvation reactions of layered ternary sulfides AxTiS2, AxNbS2, and AxTaS2

3. Superconductivity of alkali metal intercalated ZrSe2

4. Electric-field-induced superconductivity in an insulator

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