Subband transitions in dual-band n-B-n InAs/GaSb superlattice infrared photodetector identified by photoresponse spectra
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3212738
Reference16 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Type II InAs∕GaSb strain layer superlattice detectors with p-on-n polarity
3. Midinfrared InAs∕GaSb type-II superlattice interband tunneling photodetectors
4. Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices
5. nBn detector, an infrared detector with reduced dark current and higher operating temperature
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1. A dual-band HgCdTe nBn infrared detector design;Infrared Sensors, Devices, and Applications IX;2019-09-09
2. Influence of various parameters and phenomena on the absorption edge of InAs/GaSb superlattices;Superlattices and Microstructures;2019-01
3. Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure;AIP Advances;2018-02
4. Transition behaviors in biased asymmetric quantum dot-in-double-well photodetector;Current Applied Physics;2014-05
5. Electrical characteristics of homoepitaxial p-GaSb analyzed by the p–n junction: A correction on the Hall parameter of heteroepitaxial p-GaSb/SI–GaAs;Current Applied Physics;2012-11
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