Facile fabrication of lateral nanowire wrap-gate devices with improved performance-Reference-Cited by-同舟云学术

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Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Published:2011-10-24 Issue:17 Volume:99 Page:173101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dhara Sajal,Sengupta Shamashis,Solanki Hari S.,Maurya Arvind,Pavan R. Arvind,Gokhale M. R.,Bhattacharya Arnab,Deshmukh Mandar M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3634010

Reference18 articles.

1. Programmable nanowire circuits for nanoprocessors

2. InAs Nanowire Transistors as Gas Sensor and the Response Mechanism

3. Gas Detection with Vertical InAs Nanowire Arrays

4. Vertical high-mobility wrap-gated InAs nanowire transistor

5. Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

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