Mobile defects as mediated states for charge-carrier trapping in metal halide perovskites quantum dots

Author:

Liu Xiao-Yi1,Li Wei-Ping2,Cui Yu1ORCID,Li Shao-Juan3,Yang Ran-Bo1,Li Zhi-Qing1ORCID,Wang Zi-Wu1ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University 1 , Tianjin 300354, China

2. Department of Basic Courses, Tianjin Sino-German University of Applied Sciences 2 , Tianjin 300350, China

3. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics Chinese Academy of Sciences 3 , Changchun 130033, China

Abstract

The migration motion of defects in metal halide perovskites' quantum dots (MHPQDs) results in charge-carrier trapping which has become more complicated. We study two-step trapping mediated by mobile defects between the ground state of MHPQDs and a fixed-depth defect using a full-configuration defect method, where all possible trapping processes mediated by these mobile defects could be reproduced and the fastest channels among them are picked out. We find that these two-step trapping processes could keep more one order of magnitude faster than these direct ones as mobile defects with the appropriate localization strength, which implies that these indirect trapping should play the crucial rule to determine the non-radiative recombination losses. These results provide the significant explanation for studying non-radiation processes of carriers in the presence of the migration defects in recent experiments. Moreover, this model will be available to analyze some key performance related defects in electronic devices.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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