Inverted‐ridge‐waveguide double‐heterostructure injection laser with current and lateral optical confinement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89474
Reference7 articles.
1. Growth characteristics of GaAs‐Ga1−xAlxAs structures fabricated by liquid‐phase epitaxy over preferentially etched channels
2. Mode properties of GaAs‐Ga1−xAlxAs heterostructure inverted‐ridge optical waveguides
3. Optically pumped GaAs‐Ga1−xAlxAs half‐ring laser fabricated by liquid‐phase epitaxy over chemically etched channels
4. GaAs–Ga1−xAlxAs buried‐heterostructure injection lasers
5. Etched buried heterostructure GaAs/GaAlAs injection lasers
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1. GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique;Semiconductor Science and Technology;1999-01-01
2. Chapter 1 Principles and Characteristics of Integratable Active and Passive Optical Devices;Lightwave Communications Technology - Integrated Optoelectronics;1985
3. Liquid-phase epitaxy over channelled substrates;Journal of Crystal Growth;1984-12
4. Mode characteristics of large-optical-cavity V-channeled substrate inner stripe injection lasers;IEEE Journal of Quantum Electronics;1983-10
5. Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition;Japanese Journal of Applied Physics;1983-07-20
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