Raman spectroscopy of ultrathin strained-silicon-on-insulator: Size effects in strain, elastic, and phonon properties
Author:
Affiliation:
1. Nanoelectronics Research Institute, AIST, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562, Japan
Funder
JST-ALCA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4914031
Reference22 articles.
1. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
2. Ultrathin Strained-SOI by Stress Balance on Compliant Substrates and FET Performance
3. Effect of native oxides on the elasticity of a silicon nano-scale beam
4. Study on Size-Dependent Young’s Modulus of a Silicon Nanobeam by Molecular Dynamics Simulation
5. Size-dependent elastic moduli of platelike nanomaterials
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