Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3-Reference-Cited by-同舟云学术

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Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3

Published:2012-02-13 Issue:7 Volume:100 Page:071907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Y.,Chen X.,Wang Z.,Shi J.,Miotkowski I.,Chen Y. P.,Sharma P. A.,Lima Sharma A. L.,Hekmaty M. A.,Jiang Z.,Smirnov D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3685465

Reference19 articles.

1. Colloquium: Topological insulators

2. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

3. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

4. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

5. Gate-Voltage Control of Chemical Potential and Weak Antilocalization inBi2Se3

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