Study of indium antimonide metal‐oxide‐semiconductor structure prepared by direct photochemical‐vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357265
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1. InSb Charge-Injection Device Imaging Array
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4. Plasma-enhanced chemically vapour-deposited silicon dioxide for metal/oxide/semiconductor structures on InSb
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2. Comparative analysis of oxide phase formation and its effects on electrical properties of SiO2/InSb metal-oxide-semiconductor structures;Thin Solid Films;2012-06
3. Reaction of Fully Indium-Exchanged Zeolite A with Hydrogen Sulfide. Crystal Structures of Indium-Exchanged Zeolite A Containing In2S, InSH, Sorbed H2S, and (In5)7+;The Journal of Physical Chemistry B;2002-04-17
4. 1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors;Journal of Applied Physics;1999-06-15
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