Ballistic electron microscopy study of ultrathin oxidized aluminum barriers for magnetic tunnel junctions-Reference-Cited by-同舟云学术

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Ballistic electron microscopy study of ultrathin oxidized aluminum barriers for magnetic tunnel junctions

Published:2001-03-12 Issue:11 Volume:78 Page:1601-1603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rippard W. H.,Perrella A. C.,Buhrman R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1352045

Reference10 articles.

1. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

2. Comparison of oxidation methods for magnetic tunnel junction material

3. D. A. Rabson, B. J. Jonsson-Akerman, A. H. Romero, R. Escudero, C. Leighton, S. Kim, and I. K. Schuller, cond-mat/0007404.

4. Proper oxidation for spin-dependent tunnel junctions

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1. The impact of barrier height distributions in tunnel junctions;Journal of Applied Physics;2009-05

2. Spatially resolved electronic properties of MgO/GaAs(001) tunnel barrier studied by ballistic electron emission microscopy;Applied Physics Letters;2008-10-27

3. Hot Electron Spintronics;Handbook of Magnetism and Advanced Magnetic Materials;2007-12-15

4. Magnetic Tunnel Junctions;Handbook of Magnetism and Advanced Magnetic Materials;2007-12-15

5. Ballistic Electron Microscopy of Individual Molecules;Science;2007-03-30

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