Compositional dependence of the elastic constants of dilute GaAs1−xNx alloys-Reference-Cited by-同舟云学术

Compositional dependence of the elastic constants of dilute GaAs1−xNx alloys

Published:2007-06 Issue:11 Volume:101 Page:113507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Beaudry J.-N.,Shtinkov N.,Masut R. A.,Desjardins P.,Jiménez Riobóo R. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2736340

Reference34 articles.

1. The anomalous composition dependence of the bandgap of GaAsN

2. Nitrogen activated bowing parameter of GaAs1−xNx (x⩽1%) obtained from photoreflectance spectra

3. Evidence for large configuration-induced band-gap fluctuations inGaAs1−xNxalloys

4. III N V semiconductors for solar photovoltaic applications

5. GaInNAs: a novel material for long-wavelength semiconductor lasers

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1. Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells;Physical Review B;2012-01-10

2. GaN: elastic coefficients;New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors;2011

3. GaAs: elastic coefficients, internal strain parameter;New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors;2011

4. Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation;Physical Review B;2009-08-25