Fabrication and independent control of patterned polymer gate for a few-layer WSe2 field-effect transistor
Author:
Affiliation:
1. Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
2. Department of Chemistry Education, Seoul National University, Seoul 151-742, Republic of Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961990
Reference30 articles.
1. Single-layer MoS2 transistors
2. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
3. Large, non-saturating magnetoresistance in WTe2
4. Superconducting Dome in a Gate-Tuned Band Insulator
5. Gate-tunable phase transitions in thin flakes of 1T-TaS2
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