A new connection rule of wave functions at a heterointerface and band discontinuity between GaAs and AlGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336716
Reference10 articles.
1. Optical properties of (AlAs)n(GaAs)nsuperlattices grown by metalorganic chemical vapor deposition
2. Phase-Locked Epitaxy Using RHEED Intensity Oscillation
3. Phase-Locked Epitaxy Using RHEED Intensity Oscillation
4. Confined carrier quantum states in ultrathin semiconductor heterostructures
5. MOVPE Growth of Ga1-xAlxAs-GaAs Quantum Well Heterostructures
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1. Accurate Modeling of Double Barrier Resonant Tunneling Diodes;Frontiers in Nanoscale Science of Micron/Submicron Devices;1996
2. Exact effective-mass theory for heterostructures;Physical Review B;1995-10-15
3. Form of kinetic energy in effective-mass Hamiltonians for heterostructures;Physical Review B;1995-06-15
4. Finite Element Solutions to GaAs-AlAs Quantum Wells with Connection Matrices at Heterojunctions;Journal of Computational Physics;1994-12
5. Validity of the connection-matrix approach to GaAs-AlxGa1−xAs quantum wells;Physical Review B;1994-01-15
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