Mechanisms of damage recovery in ion implanted SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333949
Reference11 articles.
1. Electronic structure ofE1′centers in SiO2
2. Ion-Implantation Effects in Noncrystalline SiO2
3. Oxygen-associated trapped-hole centers in high-purity fused silicas
4. E′center in glassy SiO2: Microwave saturation properties and confirmation of the primarySi29hyperfine structure
5. Annealing studies of irradiation effects in vitreous silica
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