Non-Gaussian behavior and anticorrelations in ultrathin gate oxides after soft breakdown
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123622
Reference11 articles.
1. Fractal Dimension of Dielectric Breakdown
2. Statistical Models of Breakdown and Fracture
3. Modeling and characterization of gate oxide reliability
4. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
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