Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxy

Author:

Xu Xiaotao12ORCID,He Xi134ORCID,Shi Xiaoyan2ORCID,Božović Ivan134ORCID

Affiliation:

1. Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USA

2. Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080-3021, USA

3. Department of Chemistry, Yale University, New Haven, Connecticut 06520, USA

4. Energy Science Institute, Yale University, West Haven, Connecticut 06516, USA

Abstract

Atomic layer-by-layer molecular beam epitaxy (ALL-MBE) is a sophisticated technique to synthesize high-temperature superconductor (HTS) materials. ALL-MBE produces single-crystal HTS films with atomically smooth surfaces and interfaces, as well as precise multilayer heterostructures engineered down to a single atomic layer level. This enables the fabrication of tunnel junctions, nanowires, nanorings, and other HTS devices of interest. Our group has focused on ALL-MBE synthesis and materials science of La2−xSrxCuO4 (LSCO), a representative HTS cuprate. In the past two decades, we have synthesized over three thousand LSCO thin films and characterized them by a range of analytical techniques. Here, we present in full detail a systematic process for the synthesis and engineering of atomically perfect LSCO films. The procedure includes the preparation of substrates, calibration of the elemental sources, the recipe for ALL growth of LSCO films without any secondary-phase precipitates, post-growth annealing of the films, and ex situ film characterization. This report should aid replication and dissemination of this technique of synthesizing single-crystal LSCO films for basic research as well as for HTS electronic applications.

Funder

U.S. Department of Energy

Gordon and Betty Moore Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

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