Ultrafast photodetection with an AlInAs/GaInAs heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110649
Reference8 articles.
1. InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
2. Ultrafast graded double‐heterostructure GaInAs/InP photodiode
3. High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor
4. Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminal
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