Luminescence intensity and lifetime dependences on temperature for Nd‐doped GaP and GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104725
Reference10 articles.
1. Photo- and Electro-Luminescence of Rare Earth (Er, Yb)-Doped GaAs and InP Grown by Metalorganic Chemical Vapor Deposition
2. MOCVD Growth and PL-Characteristics of Nd Doped GaAs
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