Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2781087
Reference37 articles.
1. Design Optimization of AlInAs–GaInAs HEMTs for High-Frequency Applications
2. Design Optimization of AlInAs–GaInAs HEMTs for Low-Noise Applications
3. Room-temperature terahertz emission from nanometer field-effect transistors
4. Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
5. Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors
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