Material and electrical properties of HfxRuy and HfxRuyNz metals as gate electrodes for p-metal oxide semiconductor field effect transistor devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2996111
Reference39 articles.
1. Investigations of the interface stability in HfO2–metal electrodes
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4. High-κ Dielectric Materials for Microelectronics
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1. On the synthesis of a compound with positive enthalpy of formation: Zinc-blende-like RuN thin films obtained by rf-magnetron sputtering;Applied Surface Science;2014-11
2. Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys;Physical Review B;2012-09-05
3. Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices;Journal of Applied Physics;2012-07
4. Development of hafnium based high-k materials—A review;Materials Science and Engineering: R: Reports;2011-07
5. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology;Progress in Materials Science;2011-07
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