Electrical Properties of the Interface Region of the Ge‐Si Alloyed Heterojunction-Reference-Cited by-同舟云学术

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Electrical Properties of the Interface Region of the Ge‐Si Alloyed Heterojunction

Published:1967-11 Issue:12 Volume:38 Page:4739-4745
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thompson H. W.,Reenstra A. L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1709211

Reference26 articles.

1. Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]

2. Tunnel Diodes by Vapor Growth of Ge on Ge and on GaAs [Letter to the Editor]

3. Experiments on Ge-GaAs heterojunctions

4. Interface states in abrupt semiconductor heterojunctions

5. p-n heterojunctions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SURVEY OF EXPERIMENTAL WORK ON HETEROJUNCTIONS;Semiconductor Heterojunctions;1974

2. METHODS OF PREPARATION OF HETEROJUNCTIONS;Semiconductor Heterojunctions;1974

3. Bibliography;Heterojunctions and Metal Semiconductor Junctions;1972

4. High‐Frequency Noise in Germanium‐Silicon n‐n Heterojunctions;Journal of Applied Physics;1969-09

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