Level excitation cross sections of Si Ifragments produced by 100 eV electron impact on SiH4
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.454641
Reference19 articles.
1. Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous silicon
2. Evidence for a time dependent excitation process in silane radio frequency glow discharges
3. Emission cross sections from fragments produced by electron impact on silane
4. Dissociative excitation of SiH4, SiD4, Si2H6 and GeH4 by 0–100 eV electron impact
5. Emission Cross Sections of Excited Fragments Produced by 0-100 eV Electron Impact on SiH4: Application of the “He Standard”
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Absolute cross section for the formation of Si(1S) atoms following electron impact dissociation of SiH4;The Journal of Chemical Physics;2000-08-08
2. Spectroscopic diagnostics and modelling of silane microwave plasmas;Plasma Physics and Controlled Fusion;1998-06-01
3. Cross-Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry;Contributions to Plasma Physics;1996
4. Lifetimes of neutral and singly-ionized germanium;Journal of Quantitative Spectroscopy and Radiative Transfer;1990-06
5. Level Excitation Cross Sections of Atomic Fragments in Low-Energy Electron Impact Dissociation of Group IV Hydrides;Japanese Journal of Applied Physics;1990-01-20
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