Measurements of Peltier cooling at a Ga‐GaAs interface using a liquid‐phase epitaxy system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321988
Reference6 articles.
1. Application of the Peltier Effect for the Determination of Crystal Growth Rates
2. Modulation of Dopant Segregation by Electric Currents in Czochralski-Type Crystal Growth
3. Application of Interface Demarcation to the Study of Facet Growth and Segregation: Germanium
4. Current-Controlled Growth and Dopant Modulation in Liquid Phase Epitaxy
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3. Joule effect as a barrier for unrestricted growth of bulk crystals by liquid phase electroepitaxy;Journal of Crystal Growth;1997-02
4. Liquid phase electroepitaxy of III–V semiconductors;Journal of Crystal Growth;1995-01
5. Growth of InAsP on InP by Liquid Phase Electroepitaxy;Japanese Journal of Applied Physics;1991-03-15
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