A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications-Reference-Cited by-同舟云学术

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

Published:2015-12-28 Issue:24 Volume:118 Page:245704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pérez E.¹,Dueñas S.¹^ORCID,Castán H.¹,García H.¹,Bailón L.¹,Montero D.²³^ORCID,García-Hernansanz R.²³,García-Hemme E.²³^ORCID,Olea J.³⁴,González-Díaz G.²³

Affiliation:

1. Dept. de Electricidad y Electrónica, Universidad de Valladolid, Paseo de Belén 15, 47011 Valladolid, Spain

2. Dept. de Física Aplicada III (Electricidad y Electrónica), Univ. Complutense de Madrid, 28040 Madrid, Spain

3. CEI Campus Moncloa, UCM-UPM, 28040 Madrid, Spain

4. Instituto de Energía Solar, E.T.S.I. de Telecomunicación, Univ. Politécnica de Madrid, 28040 Madrid, Spain

Funder

Ministerio de Ciencia e InnovaciÃÆÃÂ³n (Spain)

Moncloa Campus of International Excellence

University of Valladolid

Ministerio de Economía y Competitividad (MINECO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939198

Reference43 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Intermediate band mobility in heavily titanium-doped silicon layers

3. Theoretical Limits of Photovoltaic Conversion and New-Generation Solar Cells

4. Limiting efficiencies for photovoltaic energy conversion in multigap systems

5. Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

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