Temperature dependence of the current conduction mechanisms in ferroelectric Pb(Zr0.53,Ti0.47)O3 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1646441
Reference23 articles.
1. Leakage Current Characteristics of Lead-Zirconate-Titanate Thin Film Capacitors for Memory Device Applications
2. A model for electrical conduction in metal‐ferroelectric‐metal thin‐film capacitors
3. Thickness-Dependent Electrical Properties of Pb(Zr, Ti)O[sub 3] Thin Film Capacitors for Memory Device Applications
4. Electronic Conduction Characteristics of Sol-Gel Ferroelectric $\bf Pb(Zr_{0.4}Ti_{0.6})O_{3}$ Thin-Film Capacitors: Part I
5. Ferroelectric Schottky Diode
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