Growth and valence band offset measurement of PbTe/InSb heterojunctions-Reference-Cited by-同舟云学术

Growth and valence band offset measurement of PbTe/InSb heterojunctions

Published:2012-01-30 Issue:5 Volume:100 Page:052108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Kyoung-Keun,Priyantha Weerasinghe,Myers Thomas H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3681161

Reference22 articles.

1. Systematic study of PbTe (111) molecular‐beam epitaxy using reflection high‐energy electron‐diffraction intensity oscillations

2. D. Khokhlov, Lead Chalcogenides: Physics and Applications—Optoelectronic Properties of Semiconductors and Superlattices (Taylor & Francis, New York, 2002), Vol. 18, p. 145.

3. MBE of high mobility PbTe films and PbTe/Pb1-xEuxTe heterostructures

4. Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F2buffer layer

5. Thermal-mismatch-strain relaxation in epitaxialCaF2,BaF2/CaF2, and PbSe/BaF2/CaF2layers on Si(111) after many temperature cycles

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