Improved passivation for SHJ utilizing dual intrinsic a-Si:H layers on an inline PECVD tool-Reference-Cited by-同舟云学术

Improved passivation for SHJ utilizing dual intrinsic a-Si:H layers on an inline PECVD tool

Published:2019 Issue: Volume: Page:
ISSN:0094-243X
Container-title:15th International Conference on Concentrator Photovoltaic Systems (CPV-15)
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Author:

Bodlak Lara,Temmler Jan,Moldovan Anamaria,Rentsch Jochen

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5123850

Reference9 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. K. Lee, et al. (2014). Improvement of c-Si surface passivation using dual intrinsic a-Si:H layers for silicon heterojunction solar cells. Component and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Republic of Korea.

3. L. Barraud, et al. (2017). Defect creation in Silicon Hetero Junction solar cells. PV-Center, CSEM, Neuchatel, Switzerland.

4. J. Temmler, et al. (2018). Inline PECVD Deposition of a-Si Layers for Silicon Heterojunction Solar Cells on an Industrial Scale. Ampere Workshop 2018

5. Impact of intrinsic amorphous silicon bilayers in silicon heterojunction solar cells

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