Highly charged ion beam applied to lithography technique (invited)
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Reference10 articles.
1. The interaction of slow highly charged ions on surfaces (invited)
2. Slow highly charged ions for nanoscale surface modifications
3. Masked ion beam lithography with highly charged ions
4. Exposure of self-assembled monolayers to highly charged ions and metastable atoms
5. First operation of ECR ion source at Kochi University of Technology
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigations of the emittance and brightness of ion beams from an electron beam ion source of the Dresden EBIS type;Review of Scientific Instruments;2010-02
2. Analysis of Si crystal irradiated by highly-charged Ar ions using RBS-channeling technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05
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