Silicon epitaxial growth at 300 °C by plasma enhanced chemical vapor deposition from SiH4/H2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109625
Reference10 articles.
1. Recent developments in silicon molecular beam epitaxy
2. 370 °C clean for Si molecular beam epitaxy using a HF dip
3. Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and itsinsituellipsometry monitoring
4. Low‐temperature surface cleaning method using low‐energy reactive ionized species
5. Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition
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2. First-principles analysis of He and H atom incidence onto hydrogen-terminated Si(001) 2 × 1 surface;Surface and Interface Analysis;2008
3. Defect-free growth of epitaxial silicon at low temperatures (500–800 °C) by atmospheric pressure plasma chemical vapor deposition;Applied Physics A;2005-11
4. High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition;Thin Solid Films;2003-11
5. Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C;Thin Solid Films;2002-02
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