Enhanced Seebeck effect in gated O-shaped Kekulé graphene junctions

Author:

Zhang Peipei1ORCID,Wang Chao2ORCID,Zhai Lixue1ORCID,Song Juntao1ORCID

Affiliation:

1. College of Physics and Hebei Advanced Thin Films Laboratory, Hebei Normal University 1 , Shijiazhuang, Hebei 050024, China

2. College of Physics, Shijiazhuang University 2 , Shijiazhuang, Hebei 050035, China

Abstract

The Seebeck effect in graphene with uniform Kekulé lattice distortion has been studied using the tight-binding model combined with the nonequilibrium Green's function method. The numerical results of this work show that the Seebeck coefficient of the O-shaped Kekulé graphene can be enhanced by modulating the gate voltage. At room temperature (T≈300 K), the Seebeck coefficient for the armchair nanoribbon is Sc≈1370μV/K and for the zigzag nanoribbon is Sc≈1260μV/K. At low temperature (T≈128 K), the Seebeck coefficient for the armchair nanoribbon is Sc≈2500μV/K. In addition, the nano-structuration of the O-shaped Kekulé graphene layer induces an anisotropic behavior in the Seebeck effect. Our work provides an idea for the fabrication of efficient and controllable thermoelectric effect devices.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Research Fund project of Hebei Normal University

Publisher

AIP Publishing

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