Band‐edge‐related luminescence due to the energy backtransfer in Yb‐doped InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361272
Reference16 articles.
1. Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 [micro sign]m
2. Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 [micro sign]m
3. Ytterbium‐doped InP light‐emitting diode at 1.0 μm
4. Ytterbium‐doped InP light‐emitting diode at 1.0 μm
5. Electrical properties of ytterbium‐doped InP grown by metalorganic chemical vapor deposition
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