Realizing an ultralow thermal conductivity via interfacial scattering and rational-electronic band reformation in p-type Mg3Sb2

Author:

Priyadharshini S.1ORCID,Vijay V.1ORCID,Kamalakannan S.1ORCID,Archana J.1ORCID,Navaneethan M.12ORCID

Affiliation:

1. Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology 1 , Kattankulathur 603 203, India

2. Nanotechnology Research Centre, Faculty of Engineering and Technology, SRM Institute of Science and Technology 2 , Kattankulathur 603 203, India

Abstract

Eco-friendly Magnesium antimonide (Mg3Sb2) has been extensively investigated as a promising and low-toxic thermoelectric material for intermediate (500–900 K) thermoelectric applications. Herein, p-type Zn-incorporated Mg3Sb2 was prepared by hot press technique, and its thermoelectric transport properties were investigated. The formation of Mg3−xZnxSb2 solid-solution plays a significant role in enhancing electrical conductivity of 34.59 S cm−1 due to the increased carrier concentration and reduced energy gap. Reduction in lattice thermal conductivity of 0.46 W m−1 K−1 at 753 K was obtained for Mg3−xZnxSb2 (x = 0.15) by combined scattering effect of dislocations, lattice strain, and interfaces, which is clearly seen in HR-TEM and strain analysis. These favorable conditions lead to an enhanced thermoelectric figure-of-merit (zT) of 0.25 at 753 K, which is 400% improved compared to the pure Mg3Sb2 sample.

Publisher

AIP Publishing

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