Tera‐hertz GaAs metal‐semiconductor‐metal photodetectors with 25 nm finger spacing and finger width
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107862
Reference8 articles.
1. Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSi<inf>x</inf>contacts
2. 105-GHz bandwidth metal-semiconductor-metal photodiode
3. Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes
4. Fabrication of sub-50 nm finger spacing and width high-speed metal–semiconductor–metal photodetectors using high-resolution electron beam lithography and molecular beam epitaxy
5. Numerical study of currents and fields in a photoconductive detector
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