Observation of the charged defect migration that causes the degradation of double-Schottky barriers using a nondestructive quantitative profiling technique-Reference-Cited by-同舟云学术

Observation of the charged defect migration that causes the degradation of double-Schottky barriers using a nondestructive quantitative profiling technique

Published:2014-09-29 Issue:13 Volume:105 Page:133508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheng Chenlu¹,He Jinliang¹,Hu Jun¹

Affiliation:

1. State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China

Funder

973 National Basic Research Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4897152

Reference28 articles.

1. Role of Pr Segregation in Acceptor-State Formation at ZnO Grain Boundaries

2. Electrical properties of grain boundaries in polycrystalline compound semiconductors

3. Varistor Ceramics

4. Degradation Analysis of the SnO2 and ZnO-Based Varistors Using Electrostatic Force Microscopy

5. Characterization of dielectric behavior in ZnO electroceramic: Superior grain boundary, inferior grain boundary and grain

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