Interstitial supersaturation near phosphorus‐diffused emitter zones in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90853
Reference17 articles.
1. Interactions between sequential dopant diffusions in silicon-a review
2. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect
3. The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon
4. Excess vacancy generation mechanism at phosphorus diffusion into silicon
5. A new preparation method for large area electron-transparent silicon samples
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