Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory

Author:

Jin Chenxing12,Liu Wanrong12,Huang Yulong12,Xu Yunchao12,Nie Yiling12,Zhang Gengming12ORCID,He Pei12,Sun Jia12ORCID,Yang Junliang12ORCID

Affiliation:

1. Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China

2. School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China

Abstract

With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of >1 V, a steep back sweep subthreshold swing of <60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.

Funder

National Natural Science Foundation of China

Huxiang Youth Talent Support Program

Science and Technology Innovation Program of Hunan Province

Special Funding for the Construction of Innovative Provinces in Hunan Province

National Key Research and Development Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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