The influence of MoS2 on perpendicular magnetic anisotropy and spin–orbit torque of Pt/Co/Pt multilayer

Author:

Li Chexin1ORCID,Xu Xiaoguang1ORCID,Zhang Tanzhao1,Zhu Zhiqiang1ORCID,Liu Qianbiao2,Song Linxuan3ORCID,Wu Yong1ORCID,Meng Kangkang1ORCID,Chen Jikun1ORCID,Wang Wenhong3,Jiang Yong1ORCID

Affiliation:

1. School of Materials Science and Engineering, University of Science and Technology Beijing 1 , Beijing 100083, China

2. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences 2 , Beijing 100083, China

3. Institute of Physics, Chinese Academy of Sciences 3 , Beijing 100190, China

Abstract

Two-dimensional (2D) materials provide a wide choice for the next-generation spintronic devices at the post-Moore era. Here, we reveal the effect of the 2D transition metal dichalcogenide MoS2 on the perpendicular magnetic anisotropy (PMA) and spin–orbit torque (SOT) of the Pt/Co/Pt multilayer. MoS2 can distinctly enhance the PMA of Pt/Co/Pt multilayer, which shows no obvious dependence on the thickness of MoS2. Moreover, the magnetization of monolayer MoS2/Pt/Co/Pt can be switched under a small external magnetic field around 300 Oe and maintained up to 4000 Oe, verifying the enhanced PMA by MoS2. Interestingly, the SOT efficiency can also be increased about 9.65% by monolayer MoS2, which can be attributed to the spin absorption at the MoS2/Pt interface. Comparing the SOT behaviors of devices with different MoS2 thickness, the monolayer MoS2 is proved to be an ideal candidate for high-performance SOT devices.

Funder

National Key Research and Development Program of China

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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