Comment on “Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands” [Appl. Phys. Lett. <b>123</b>, 172102 (2023)]-Reference-Cited by-同舟云学术

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Comment on “Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands” [Appl. Phys. Lett. 123, 172102 (2023)]

Published:2024-08-19 Issue:8 Volume:125 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Elmahjoubi A.¹,Alhaddad T.¹,Postnikov A. V.¹^ORCID,Pagès O.¹^ORCID

Affiliation:

1. LCP-A2MC, UR 4632, Université de Lorraine , 57000 Metz, France

Funder

Université de Lorraine

Uniwersytet Mikolaja Kopernika w Toruniu

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0213520/20125472/086101_1_5.0213520.pdf

Reference12 articles.

1. Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands;Appl. Phys. Lett.,2023

2. Lattice vibrations of GaAs1−xPx single crystals;Phys. Rev.,1966

3. Infrared lattice vibrations in GaAs1−xPx alloys;Phys. Rev.,1966

4. Percolation versus cluster models for multimode vibration spectra of mixed crystals: GaAsP as a case study;Phys. Rev. B,2009

5. Extended x-ray-absorption fine-structure study of GaAsxP1−x semiconducting random solid solutions;Phys. Rev. B,1993

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