Comparison of silicon‐atom diffusion on the dimer–adatom‐stacking fault and Binnig et al. models of the reconstructed Si(111)‐(7×7) surface
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.460413
Reference25 articles.
1. Atomic and Electronic Structure of the 7 × 7 Reconstructed Si (111) Surface
2. LEED analysis of Si(111)−(7 × 7) surface models
3. Evaluation of recent Si(111)-(7 × 7) surface models
4. Surface reconstruction on semiconductors
5. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
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1. Predicting trends in rate parameters for self-diffusion on FCC metal surfaces;Surface Science;2002-08
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4. Diffusion constant of Ga, In and As adatoms on GaAs (001) surface: molecular dynamics calculations;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996
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