An atomistic mechanism for the production of two- and three-dimensional etch hillocks on Si(111) surfaces
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.479990
Reference25 articles.
1. Dynamic repulsion of surface steps during step flow etching: Controlling surface roughness with chemistry
2. Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces
3. The formation of etch hillocks during step-flow etching of Si(111)
4. On kinematic waves I. Flood movement in long rivers
5. Surface morphology of HCl etched silicon wafers
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