Reduced lattice thermal conductivity in Bi-doped Mg2Si0.4Sn0.6-Reference-Cited by-同舟云学术

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Reduced lattice thermal conductivity in Bi-doped Mg2Si0.4Sn0.6

Published:2014-11-17 Issue:20 Volume:105 Page:202104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gao Peng¹,Lu Xu²,Berkun Isil³,Schmidt Robert D.¹,Case Eldon D.¹,Hogan Timothy P.¹³

Affiliation:

1. Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824, USA

2. Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, USA

3. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4901178

Reference23 articles.

1. D. M. Rowe , CRC Handbook of Thermoelectrics ( CRC Press, Boca Raton, FL, 1995).

2. Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance ofn-TypeMg2Si1−xSnxSolid Solutions

3. Enhanced thermoelectric properties of Mg2Si0.58Sn0.42 compounds by Bi doping

4. Enhanced thermoelectric properties of n-type Mg2.16(Si0.4Sn0.6)1−ySby due to nano-sized Sn-rich precipitates and an optimized electron concentration

5. Advanced thermoelectrics governed by a single parabolic band: Mg2Si0.3Sn0.7, a canonical example

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