Band alignment of a carbon nanotube/n-type 6H-SiC heterojunction formed by surface decomposition of SiC using photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Band alignment of a carbon nanotube/n-type 6H-SiC heterojunction formed by surface decomposition of SiC using photoelectron spectroscopy

Published:2012-08-27 Issue:9 Volume:101 Page:092106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Maruyama Takahiro,Sakakibara Satoshi,Naritsuka Shigeya,Norimatsu Wataru,Kusunoki Michiko,Yamane Hiroyuki,Kosugi Nobuhiro

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4748792

Reference25 articles.

1. Controlled Growth of One-Dimensional Metal–Semiconductor and Metal–Carbon Nanotube Heterojunctions

2. Arrays of one-dimensional metal/silicon and metal/carbon nanotube heterojunctions

3. Vertically Aligned Carbon-Nanotube Arrays Showing Schottky Behavior at Room Temperature

4. Schottky barrier formation at a carbon nanotube—metal junction

5. Interface Dynamic Behavior Between a Carbon Nanotube and Metal Electrode

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1. Band alignment and charge transfer mechanisms in the prediction of advanced gate dielectrics for carbon nanotube field-effect transistors;Applied Surface Science;2024-10

2. Investigation of temperature-dependent electrical parameters in a Schottky barrier diode with multi-walled carbon nanotube (MWCNT) interface;Materials Science in Semiconductor Processing;2022-08

3. X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces;Diamond and Related Materials;2020-01

4. Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides;Journal of Vacuum Science & Technology B;2019-07

5. Carbon Nanotube Forests on SiC: Structural and Electrical Properties;Novel Structured Metallic and Inorganic Materials;2019

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