Influence of copper doping on the performance of optically controlled GaAs switches
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345780
Reference7 articles.
1. An optically controlled closing and opening semiconductor switch
2. A bulk optically controlled semiconductor switch
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4. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
5. A study of deep levels in GaAs by capacitance spectroscopy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of 1-MeV neutron irradiation on the operation of a bistable optically controlled semiconductor switch (BOSS);IEEE Transactions on Electron Devices;1994-06
2. Influence of arsenic vapor pressure during copper diffusion on deep level formation in silicon-doped gallium arsenide;Journal of Electronic Materials;1993-04
3. Bistable behavior of the dark current in copper‐doped semi‐insulating gallium arsenide;Journal of Applied Physics;1992-05
4. Analysis of nonohmic current‐voltage characteristics in a Cu‐compensated GaAs photoconductor;Applied Physics Letters;1991-09-02
5. EL2 related deep traps in semi‐insulating GaAs;Applied Physics Letters;1991-01-21
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