SiO2/Si interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3561741
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1. A Highly Threshold Voltage-Controllable 4T FinFET with an 8.5-nm-Thick Si-Fin Channel
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3. CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON
4. Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise inp-Type Inversion Layers on Oxidized Silicon Surfaces
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