Growth control of MnAs on GaAs(001) by reflection high-energy electron diffraction

Author:

Schippan F.,Kästner M.,Däweritz L.,Ploog K. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Molecular Beam Epitaxy of Transition Metal Monopnictides;Molecular Beam Epitaxy;2018

2. Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices;Physical Review B;2012-10-01

3. Mn-induced growth of InAs nanowires;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

4. Self-assembly and magnetic properties of MnAs nanowires on GaAs(001) substrate;Journal of Applied Physics;2010-03-15

5. Epitaxial growth and characterization of MnAs on InP and In0.53Ga0.47As;Journal of Physics D: Applied Physics;2009-04-06

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