Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4884228
Reference21 articles.
1. Progress in Ultrafast Photonics
2. Tensile-strained InGaAs/InGaAsP quantum-well optical amplifiers with a wide spectral gain region at 1.55 mu m
3. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers
4. Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers
5. Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots
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1. Modeling Electronic and Optical Properties of InAs/InP Quantum Dots;Photonics;2024-08-10
2. Bimodality in the Electroluminescence Spectra of InGaAs Quantum Well–Dot Nanostructures;Semiconductors;2022-06
3. Impact of Excited States Transitions on Polarization Property of InAs/InP Quantum Dots;IEEE Journal of Quantum Electronics;2022-02
4. Experimental and theoretical study of thermally activated carrier transfer in InAs/GaAs multilayer quantum dots;Applied Physics A;2020-06-05
5. Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm);Technical Physics Letters;2020-03
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