Ultrafast and band-selective Auger recombination in InGaN quantum wells
Author:
Affiliation:
1. Department of Chemistry, Columbia University, New York, New York 10027, USA
2. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA
Funder
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4945669
Reference23 articles.
1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
2. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
3. Efficiency droop in light-emitting diodes: Challenges and countermeasures
4. How to decide between competing efficiency droop models for GaN-based light-emitting diodes
5. Auger recombination in InGaN measured by photoluminescence
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