Study of Au/Hg3In2Te6interface by synchrotron radiation photoemission spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819438
Reference33 articles.
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2. Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
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4. Noble-metal–CdTe interface formation
5. Electronic structure study of reconstructed Au–SiC(0001) surfaces
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