Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films-Reference-Cited by-同舟云学术

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Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

Published:2016-02-14 Issue:6 Volume:119 Page:065301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Flemban T. H.¹^ORCID,Sequeira M. C.²^ORCID,Zhang Z.¹,Venkatesh S.¹,Alves E.²^ORCID,Lorenz K.²,Roqan I. S.¹

Affiliation:

1. Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

2. IPFN, Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal

Funder

General Directorate of Research Grants, King Abdulaziz City of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4941434

Reference54 articles.

1. A comprehensive review of ZnO materials and devices

2. Bound exciton and donor–acceptor pair recombinations in ZnO

3. Progress on rare-earth doped ZnO-based varistor materials

4. Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence

5. Investigation of the structural, optical and electrical properties of Nd-doped ZnO thin films deposited by spray pyrolysis

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