Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3306732
Reference22 articles.
1. Beyond Silicon's Elemental Logic
2. Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$
3. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
4. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
5. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
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1. Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1−x)2O3 for x = 0.25–0.74;ECS Journal of Solid State Science and Technology;2020-01-05
2. Atomic layer deposition based nano-island growth;Nanomaterials-Based Charge Trapping Memory Devices;2020
3. Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65;ECS Journal of Solid State Science and Technology;2019
4. Band offset and electron affinity of MBE-grown SnSe2;Applied Physics Letters;2018-01-22
5. Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices;Nanotechnology;2017-10-09
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