Atomic layer deposition of energy band tunable tin germanium oxide electron transport layer for the SnS-based solar cells with 400 mV open-circuit voltage-Reference-Cited by-同舟云学术

Atomic layer deposition of energy band tunable tin germanium oxide electron transport layer for the SnS-based solar cells with 400 mV open-circuit voltage

Published:2019-05-27 Issue:21 Volume:114 Page:213901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chua Danny¹^ORCID,Kim Sang Bok¹^ORCID,Sinsermsuksakul Prasert¹,Gordon Roy¹^ORCID

Affiliation:

1. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA

Funder

National Science Foundation

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5098766

Reference24 articles.

1. Atomic Layer Deposition of Tin Monosulfide Thin Films

2. Photovoltaic properties of SnS based solar cells

3. Electrochemical deposition of SnS thin films

4. Tin sulphide films deposited by plasma-enhanced chemical vapour deposition

5. Temperature-dependent structural and optical properties of SnS films

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